Apparatus for growing metal oxides using organometallic vapor ph

Details Apparatus for growing metal oxides using organometallic vapor ph Apparatus for growing metal oxides using organometallic vapor ph

1997-10-16

1999-09-14

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

118715, 118724, C30B 3500

Patent

active

RE0362956

ABSTRACT:
The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.

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