Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1993-03-01
1995-03-21
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 25, 117 33, 117209, 117210, 117950, C30B 1534
Patent
active
053986407
ABSTRACT:
A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.
REFERENCES:
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patent: 3915662 (1975-10-01), Labelle et al.
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patent: 4323418 (1982-04-01), Kobayashi
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patent: 4937053 (1990-07-01), Harvey
patent: 4957713 (1990-09-01), Kravetsky et al.
Borodin et al., "Variable Shaping Growth of Refractory Oxide Shaped Crystals", Journal of Crystal Growth, vol. 82 pp. 89-94, 1987.
Locher John W.
Madsen Joseph E.
Kunemund Robert
Saphikon Inc.
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