Apparatus for growing HgI.sub.2 crystals

Coating apparatus – With cutting – punching or tearing of work – Web or sheet work

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118 495, 23273R, 156610, B01J 1730, C01G 1304

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active

040942686

ABSTRACT:
A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

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patent: 3661117 (1972-05-01), Cornelius
Schieber et al., J. of Cryst. Growth, 24/25 (1974), pp. 205-211.
Scholz, Cryst. Growth Conf., 1966, Supp. to Phy. & Chem. of Solids, Pergamon, 1967, pp. 475-482.
Ponpon, IEEE Trans. on Nuclear Sci., vol. NS-22, Feb. 1975, pp. 182-191.

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