Apparatus for growing group II-VI mixed compound semiconductor

Details Apparatus for growing group II-VI mixed compound semiconductor Apparatus for growing group II-VI mixed compound semiconductor

1994-02-28

1995-07-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118729, C23C 1600

Patent

active

054317380

ABSTRACT:
A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

REFERENCES:
patent: 4439267 (1984-03-01), Jackson, Jr.
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4904337 (1990-02-01), Elliott et al.
patent: 4980204 (1990-12-01), Fujii et al.
patent: 5256205 (1993-10-01), Schmitt
Tompa et al., "MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk", J. Crystal Growth, 107 (1991), Nos. 1/4, pp. 198-202, Amsterdam, NL.

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