Apparatus for growing GaAs single crystal by using floating zone

Details Apparatus for growing GaAs single crystal by using floating zone Apparatus for growing GaAs single crystal by using floating zone

1985-09-17

1986-10-28

Lacey, David L.

Chemical apparatus and process disinfecting, deodorizing, preser

Control element responsive to a sensed operating condition

Control element responds proportionally to a variable signal...

422250, 156601, 156620, 156DIG81, 373139, 373148, C30B 1320, C30B 1328, C30B 3500

Patent

active

046198113

ABSTRACT:
An apparatus for growing a GaAs single crystal by relying on the floating zone technique in a cylinder charged with a GaAs polycrystal and a GaAs single seed crystal, comprising an As container communicating with the interior of the cylinder to supply an optimum vapor pressure of As into the cylinder under the condition that a continuous temperature variation is established between this As container and the GaAs crystals charged in the cylinder, whereby a GaAs single crystal having little deviation from stoichiometry and having a good crystal perfection is obtained.

REFERENCES:
patent: 2905798 (1959-09-01), Freutel
patent: 3136876 (1964-06-01), Crosthwait
patent: 3235339 (1966-02-01), Brunet et al.
patent: 3260573 (1966-07-01), Ziegler
patent: 3630684 (1971-12-01), Keller
patent: 3642443 (1972-02-01), Blum et al.
patent: 3857990 (1974-12-01), Steininger
patent: 3936346 (1976-02-01), Lloyd
patent: 4190486 (1980-02-01), Kyle

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