Apparatus for growing dendritic web crystals of constant width

Details Apparatus for growing dendritic web crystals of constant width Apparatus for growing dendritic web crystals of constant width

1986-12-05

1988-06-14

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156DIG84, 156DIG88, C30B 1534

Patent

active

047510595

ABSTRACT:
The concept of this invention is to provide a thermal geometry which produces web growth at a constant width by balancing the heat loss pattern from the growing dendrites in such a manner that the outer requirements for stable web growth are simultaneously met. This is accomplished by configuring the geometry of the growth system such that the heat loss pattern from the growing web, the heat loss pattern from the growing dendrites, and the temperature profile in the melt can each be controlled independently and simultaneously optimized.

REFERENCES:
patent: 3511610 (1970-05-01), Dohmen
patent: 3617223 (1971-11-01), Boatman
patent: 4184907 (1980-01-01), Yates
patent: 4217165 (1980-08-01), Ciszek
patent: 4239734 (1980-12-01), Ciszek
patent: 4271129 (1981-06-01), Berkman et al.
patent: 4289571 (1981-09-01), Jewett
patent: 4402786 (1983-09-01), Little
Seidensticker, "Dendritic Web Growth of Silicon", Crystals 8(1982), pp. 157-158.
Seidensticker and Hopkins, "Silicon Ribbon Growth by the Dendritic Web Process", Journal of Crystal Growth 50(1980), pp. 222-223.
Barrett, et al., Growth of Wide, Flat Crystals of Silicon Web, 118 Journal of the Electrochemical Society, 952-957 (1971).

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