Apparatus for growing compound semiconductor single crystals

Details Apparatus for growing compound semiconductor single crystals Apparatus for growing compound semiconductor single crystals

1983-07-06

1988-03-29

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156607, 156DIG70, 1566171, B01D 900, C30B 1522

Patent

active

047342676

ABSTRACT:
An apparatus for growing compound semiconductor single crystals includes a collector which removes the excess amount of melt B.sub.2 O.sub.3 from the crucible containing melt GaP and melt B.sub.2 O.sub.3.
The collector moves up and down independently with reference to the shaft used in pulling the single crystals from the crucible.

REFERENCES:
patent: 3511610 (1970-05-01), Dohmer
patent: 4330361 (1982-05-01), Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4478675 (1984-10-01), Akai
Translation of Mitsubishi Japanese Patent 54-123585, 9/25/79.
Mullin et al., "Liquid Encapsulation Crystal Pulling at High Pressures", J. Crystal Growth 3, 4 (1968), 281-285.
Weiner et al., "Liquid Encapsulated Czochralski Growth of GaAs", J. Elecrochem. Soc., 118, 2, Feb. 1971, 301-306.
Liquid Encapsulated Czochralski Growth of 35 mm Diameter Single Crystals of GaP, by S. F. Nygren--Journal of Crystal Growth, vol. 19 (1973) pp. 21-32.
Growth of GaAs Single Crystals by Liquid Encapsulated Czochralski Technique, by R. Thyagarajan et al.--Indian Journal of Pure & Applied Physics, vol. 17, Oct. 1979, pp. 650-654.

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