Apparatus for growing a GaAs single crystal by pulling from GaAs

Details Apparatus for growing a GaAs single crystal by pulling from GaAs Apparatus for growing a GaAs single crystal by pulling from GaAs

1992-04-27

1993-08-31

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566171, 1566181, 1566202, 156601, C30B 1520

Patent

active

052406857

ABSTRACT:
In an apparatus for growing a GaAs single crystal from its melt, As vapor which is controlled appropriately of its pressure is applied from an As chamber to the surface of the GaAs melt in a vessel throughout the growing process through an As passage communicating between the melt vessel and the As chamber, while establishing a gentle temperature gradient in the passage leading from the GaAs melt vessel to the As chamber. Whereby, a GaAs single crystal having a large diameter and a good crystal perfection with minimized deviation from stoichiometry and minimized lattice dislocation can be obtained.

REFERENCES:
patent: 3268297 (1966-08-01), Fischer
patent: 3617392 (1971-11-01), Locke
patent: 3700412 (1972-10-01), Higashi et al.
patent: 4028058 (1977-06-01), Beinnert et al.
patent: 4058429 (1977-11-01), Duncan et al.
patent: 4190486 (1980-02-01), Kyle
patent: 4832922 (1989-05-01), Nishizawa
Hanney, "Semiconductor Crystal Growing", Semi-Conductors, Monograph, Series No. 140, 1966 pp. 107-110.
Farges "A Method for the In-Situ Synthesis and Growth of Indium Phosphide in a Czochralski Puller", Journal of Crystal Growth, vol. 59 (1982) 665-668.

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