Apparatus for growing a compound semiconductor crystal

Details Apparatus for growing a compound semiconductor crystal Apparatus for growing a compound semiconductor crystal

1989-06-22

1992-01-28

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422245, 422248, 1566171, 1566181, 1566202, 156DIG70, C30B 1502

Patent

active

050842480

ABSTRACT:
An apparatus for growing a compound semiconductor crystal from a melt containing a plurality of component elements includes a crucible for accommodating the melt. A holding rod holds a seed crystal on which the compound semiconductor crystal is epitaxially grown such that the seed crystal makes contact with the melt. A first electrode is provided in contact with the melt in a vicinity of the seed crystal. A second electrode is provided in contact with the melt such that the second electrode is separated from the first electrode. A current source is connected across the first and second electrodes for flowing a direct current from the first electrode to the second electrode along a current path extending through the melt from the first electrode to the second electrode. A semiconductor piece of a semiconductor material contains elements which are included in the plurality of component elements forming the melt such that the semiconductor piece is provided in contact with the melt at a position between the first and second electrodes.

REFERENCES:
patent: 2842467 (1958-07-01), Landauer et al.
patent: 3600294 (1971-08-01), Rubin et al.
patent: 4496424 (1985-01-01), Terashima et al.
patent: 4620897 (1986-11-01), Nakajima

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