Apparatus for gas source molecular beam epitaxy

Details Apparatus for gas source molecular beam epitaxy Apparatus for gas source molecular beam epitaxy

1992-04-07

1993-10-12

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, C23C 1400

Patent

active

052521311

ABSTRACT:
This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.

REFERENCES:
patent: 4492852 (1985-01-01), Finegan
patent: 4838201 (1989-06-01), Fraas
patent: 4979465 (1990-12-01), Yoshino
patent: 4989543 (1991-02-01), Schmitt
patent: 5033407 (1992-07-01), Mizuno
patent: 5107791 (1992-04-01), Hirokawa

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