Apparatus for gas source molecular beam epitaxy

Details Apparatus for gas source molecular beam epitaxy Apparatus for gas source molecular beam epitaxy

1993-04-09

1995-03-21

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, C23C 1600

Patent

active

053991990

ABSTRACT:
This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.

REFERENCES:
patent: 4492852 (1985-01-01), Finegan et al.
patent: 4838201 (1989-06-01), Fraas et al.
patent: 4979465 (1990-12-01), Yoshino et al.
patent: 4989543 (1991-02-01), Schmitt
patent: 5033407 (1991-07-01), Mizuno et al.
patent: 5107791 (1992-04-01), Hirokawa et al.
patent: 5284521 (1994-02-01), Aketagawa

Affiliated with

Also associated with

Rating

Apparatus for gas source molecular beam epitaxy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for gas source molecular beam epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for gas source molecular beam epitaxy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1146386