Coating apparatus – Gas or vapor deposition – With treating means
Patent
1988-02-29
1989-07-18
Lawrence, Evan
Coating apparatus
Gas or vapor deposition
With treating means
118501, 118730, C23C 1646
Patent
active
048482722
ABSTRACT:
An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.
REFERENCES:
patent: 3594227 (1971-07-01), Oswald
patent: 4597986 (1986-07-01), Scapple et al.
patent: 4632060 (1986-12-01), Goto et al.
patent: 4694779 (1987-09-01), Hammond et al.
Patent Abstracts of Japan, vol. 3, No. 86, (E--125), 24th Jul. 1979, p. 50E 125; JP--A--54--64977 (Nippon Denki K.K.), 25th May, 1979.
Patent Abstracts of Japan, vol. 8, No. 138, (C--231) [1575], 27th Jun., 1984; JP--A--59--50092, (Toshiba Kikai K.K.), 22nd Mar., 1984.
Araki Kenji
Kamio Hiroshi
Ohmura Masanori
Sakama Hiroshi
Shima Yoshinobu
Lawrence Evan
Nippon Kokan Kabushiki Kaisha
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