Apparatus for forming thin film by chemical vapor deposition

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118726, 118729, C23C 1600

Patent

active

057762546

ABSTRACT:
A chemical vapor deposition (CVD) apparatus for depositing a thin film on a substrate by CVD has a material container for containing a liquid CVD source material, a material feeder for feeding the liquid CVD source material to a vaporizer for vaporizing the liquid CVD source material, and a reaction chamber for forming the thin film on the substrate using the CVD source material gas. Both the vaporizer and piping between the vaporizer and the reaction chamber are located in a thermostatic box surrounding the reaction chamber. Thus, the structure of the apparatus is simplified and also the heat efficiency of the apparatus is improved.

REFERENCES:
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5372850 (1994-12-01), Uchikawa et al.

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