Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-01-24
1992-03-31
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118723, C23C 1422
Patent
active
051005263
ABSTRACT:
An apparatus for forming a thin film includes a vacuum chamber; an exhaust system for evacuating the vacuum chamber and a crucible for generating, in the vacuum chamber, clusters of a deposit substance. The apparatus for forming a thin film further includes an ionizing device for ionizing part of the clusters generated by the crucible; an acceleration device for accelerating ionized clusters to collide with a substrate retained in the vacuum chamber; and a filter for removing ionized clusters smaller than a predetermined size.
REFERENCES:
patent: 3847115 (1974-11-01), Tashbar
patent: 4218495 (1980-08-01), Takagi et al.
patent: 4354909 (1982-10-01), Takagi et al.
patent: 4687939 (1987-08-01), Miyauchi et al.
patent: 4805555 (1989-02-01), Itoh
patent: 4811690 (1989-03-01), Kawagoe et al.
patent: 4902572 (1990-02-01), Horne et al.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Nam
LandOfFree
Apparatus for forming thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for forming thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming thin film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2256672