Apparatus for forming thin film

Details Apparatus for forming thin film Apparatus for forming thin film

1989-06-07

1991-04-30

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 427 39, 4272552, C23C 1650

Patent

active

050108425

ABSTRACT:
Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.

REFERENCES:
patent: 4262631 (1981-04-01), Kubacki
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4716852 (1988-01-01), Tsujii et al.
Brodsky, M. H. and I. Haller, "Method of Preparing Hydrogenated Amorphous Silicon", IBM Technical Disclosure Bulletin, vol. 22, No. 8A, (Jan. 1980), pp. 3391-3392.

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