Apparatus for forming semiconductor crystals of essentially unif

Details Apparatus for forming semiconductor crystals of essentially unif Apparatus for forming semiconductor crystals of essentially unif

1975-08-28

1976-09-14

Yudkoff, Norman

Chemistry: physical processes

Physical processes

Crystallization

156601, 156602, 156617SP, 324 65R, B01J 1700, B01J 1718

Patent

active

039804380

ABSTRACT:
Apparatus is provided for forming, by the Czochralski technique, single semiconductor crystals having essentially uniform diameters throughout their lengths. The apparatus includes means to monitor and control crystal diameter which takes advantage of the fact that the melt volume from which the crystal is pulled and the dielectric crucible containing the melt volume can be incorporated in a crucible assembly circuit in which the resistance varies with the melt volume level in the crucible. Determination of the difference between the measured resistance in the crucible assembly circuit and a programmed reference resistance produces a signal which is used to control one of two operational parameters--the rate at which the crystal is pulled or the temperature of the melt volume--to produce a uniform-diameter crystal.

REFERENCES:
patent: 2908004 (1959-10-01), Levinson
patent: 3346344 (1967-10-01), Levinstein et al.
patent: 3459152 (1969-08-01), Garrison et al.
patent: 3822111 (1974-07-01), Suzuki et al.
patent: 3934983 (1976-01-01), Bardsley et al.
patent: 3935058 (1976-01-01), Kuhlmann-Schafer

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