Apparatus for forming non-single-crystal semiconductor thin film

Details Apparatus for forming non-single-crystal semiconductor thin film Apparatus for forming non-single-crystal semiconductor thin film

1997-12-15

2000-12-12

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Running length work

118723E, 118724, C23C 1600

Patent

active

061593001

ABSTRACT:
An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall is provided. While the beltlike substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the beltlike substrate. A cooling mechanism and a temperature-increasing mechanism are provided to cover a part of an outside surface of the deposition chamber wall. An apparatus for forming a non-single-crystal semiconductor thin film where the gas supply device comprises a gas manifold set apart from the deposition chamber wall is another embodiment.

REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4609771 (1986-09-01), Guha et al.
patent: 4729341 (1988-03-01), Fournier et al.
patent: 4960488 (1990-10-01), Law et al.
Patent Abstracts of Japan, vol. 13, no. 230 (E-764), May 26, 1989 re: Publication No. 01036085
Patent Abstracts of Japan, vol. 13, no. 230 (E-764), May 26, 1989 re: Publication No. 01036085.

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