Apparatus for forming metal film and process for forming metal f

Details Apparatus for forming metal film and process for forming metal f Apparatus for forming metal film and process for forming metal f

1995-03-17

1997-08-05

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118724, C23C 1600

Patent

active

056538103

ABSTRACT:
An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy for generating plasma, a heating means for heating a plurality of substrates disposed between the first and second electrodes, and a gas feed means that feeds into the reaction chamber a starting material gas for forming metal films; the plasma is generated across the first and second electrodes to form metal films on the plurality of substrates.
The apparatus can form metal films at a high throughput at one time process, and at a low cost.

REFERENCES:
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patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5160545 (1992-11-01), Maloney et al.
Rosler, R.S., et al. "Plasma Enhanced CVD In a Novel LPCVD-type System", Solid State Technology, vol. 24, Apr. 1981, pp. 172-177.
Tsubouchi, K, et al. "Selective and Nonselective Deposition of Aluminum By LPCVD Using DMAH And Microregion Observation of Single Crystal Aluminum With Scanning .mu.-Rheed Microscope", Symposium on VLSI Technology, Honolulu, Jun. 4-7, 1990, No. Symp. 10, Institute of Electrical and Electronics Engineers, pp. 5-6.
Patent Abstracts of Japan vol. 007, No. 123 (E-178), May 27, 1983.
Rosler et al., "LPCVD-Type Plasma Enhanced Deposition System", Solid State Technology, Dec. 1979, pp. 88-92.

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