Apparatus for forming materials

Coating apparatus – With vacuum or fluid pressure chamber – With means to apply electrical and/or radiant energy to work...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, 20429802, 20429831, C23C 1600, C23C 1400

Patent

active

058633278

ABSTRACT:
A semiconductor fabrication apparatus and methods for processing materials on a semiconductor wafer are disclosed. The fabrication apparatus is a processing chamber comprising: an ultraviolet radiation source and an infrared radiation source, the radiation sources symmetrically arranged such that radiation is substantially uniform throughout the chamber and the radiation sources being capable of being used as a film deposition radiation source or a film annealing radiation source or both; an ultraviolet radiation sensor and an infrared radiation sensor to provide a feedback loop to the ultraviolet radiation source and to the infrared radiation source, respectively, so that a desired level of ultraviolet radiation and infrared radiation is maintained inside the chamber. An exemplary method to utilize the semiconductor fabrication apparatus comprises processing a material on a semiconductor assembly during semiconductor fabrication, by the steps of: precleaning a semiconductor assembly in ultraviolet radiation, the step of precleaning performed prior to the step of forming; forming a film in ultraviolet radiation and infrared radiation; annealing the film ultraviolet light radiation and infrared radiation; wherein the ultraviolet radiation and the infrared radiation are supplied by independently operable ultraviolet and infrared radiation sources within the same processing chamber.

REFERENCES:
patent: 4246298 (1981-01-01), Guarnery et al.
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4699689 (1987-10-01), Bersin
patent: 5268201 (1993-12-01), Komaki et al.
patent: 5449799 (1995-09-01), Terfloth et al.
patent: 5510158 (1996-04-01), Hiramoto et al.
patent: 5531857 (1996-07-01), Engelsberg et al.
patent: 5580421 (1996-12-01), Hiatt et al.
patent: 5658417 (1997-08-01), Watanabe et al.
"How Rapid Isothermal Processing Can be a Cominant Semiconductor Processing Technolgoy in the 21st Century" Mat. Res. Soc. Symp. Proc. vol. 429, 1996 Materials Research Society, pp. 81-94.
"Development Trends in Rapid Isothermal Processing (RIP) Dominated Semiconductor Manufacturing" --R. Singh, Department of Electrical and Computer Engineering Clemson University, pp. 31-42.
"Metalorganic Chemical Apor Deposition (MOCVD) of Oxides for Electronic and Photonic Applications" --The Minerals, Metal & Materials Society, 1995, pp. 211-220.
"UV-O.sub.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's" --IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 455-462.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for forming materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for forming materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming materials will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1446617

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.