Coating processes – Coating by vapor – gas – or smoke – Base supplied constituent
Patent
1995-07-24
1998-11-24
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Base supplied constituent
438773, 118715, C23C 1600, H01L 2100
Patent
active
058403680
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to an apparatus for forming low-temperature oxide films and a method of forming low-temperature oxide films which are capable of forming an oxide film on a sample at low temperatures, and in particular, relates to an apparatus for forming low-temperature oxide films and a method of forming low-temperature oxide films which are capable of forming highly pure oxide films at low temperatures when forming oxide films on substrates in semiconductor manufacturing processes or the like.
BACKGROUND ART
Silicon oxide technology is one of the fundamental technologies in silicon device manufacturing processes; a large amount of research has been conducted in this field. However, the fact that research is being widely conducted even at present into topics ranging from surface problems to application indicates that silicon oxide technology has not yet been perfected.
In concert with miniaturization, the characteristics of devices are liable to be influenced by crystal defects in the substrate, and furthermore, as the diameter increases, twisting or warping in the silicon wafers leads to a worsening of the precision of reticle alignment, and an increase in process performance becomes difficult. It is thought that these problems will be exaggerated by the high temperature heat treatment of silicon substrates. Furthermore, in high temperature processes, the diffusion of impurities from the outside, and the like, is likely to occur, and ideal surfaces and thin film formation become difficult.
A decrease in temperature of the semiconductor processes is an effective method of solving such problems, and a reduction in the temperature of silicon oxide film formation is an important objective.
Presently, the formation of silicon oxide films is conducted by means of dry oxidation at high temperatures of 800.degree. C. or more, and by means of wet oxidation, in which hydrogen is caused to combust in an oxygen atmosphere at a temperature of 700.degree. C. or more, water vapor is generated, and oxidation occurs. It is known that in comparison with dry oxidation, the growth rate of the oxide film is higher in wet oxidation. Accordingly, wet oxidation was more effective when forming oxide films at low temperatures using conventional technology. However, in wet oxidation, since the combustion of hydrogen is carried out, the temperature must necessarily be that of the combustion of hydrogen, 700.degree. C., or more.
Furthermore, oxidation processing is conducted under high pressure in order to form an oxide film having a greater film thickness at low temperatures. However, because a double walled structure comprising a quartz oxidation furnace and a stainless steel furnace was employed in such cases, impurities passed from the inner surface of the stainless steel through the quartz and were diffused, so that it was difficult to form highly pure oxide films.
Accordingly, in the conventional oxidation methods, large problems were caused by high temperature processing at temperatures of 700.degree. C. or more and the fact that as a result, impurities passed through the quartz tube from the outside, and were diffused, and thus a highly pure atmosphere could not be formed.
The present invention has as an object thereof to provide an apparatus for forming low-temperature oxide films and a formation method which are capable of forming oxide films at low temperatures, and furthermore prevent the diffusion of impurities from the outside.
DISCLOSURE OF THE INVENTION
The apparatus for forming low-temperature oxide films in accordance with the present invention is an apparatus for forming oxide films at low temperatures, characterized in being provided with: an oxidation furnace possessing a gas supply port and a gas exhaust port; a heater for heating said oxidation furnace to an arbitrary temperature; and a gas supply system disposed upstream of said oxidation furnace and provided with a mechanism for adding an arbitrary quantity of water or a mechanism for generating an arbitrary quantity of w
REFERENCES:
patent: 4267205 (1981-05-01), Pastor et al.
patent: 4376796 (1983-03-01), Arrasmith et al.
patent: 4599247 (1986-07-01), Bean et al.
patent: 5314846 (1994-05-01), Boitnott
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