Apparatus for forming interconnection pattern

Details Apparatus for forming interconnection pattern Apparatus for forming interconnection pattern

1991-04-11

1992-05-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156656, 1566591, B44C 122, C23F 102

Patent

active

051103940

ABSTRACT:
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, to form an interconnection pattern. Ultraviolet rays are directed onto the interconnection pattern is the atmosphere including a hydrogen gas. This method avoids generation of hydrogen halogenide which causes corrosion of metal interconnection even when the metal interconnection make contact with water in the atmosphere, thereby to prevent disconnections of the metal interconnections.

REFERENCES:
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4715921 (1987-12-01), Maher et al.
patent: 4825808 (1989-05-01), Takahashi et al.
1985 Dry Process Symposium, "Si Surface Treatment Using Deep UV Irradiation", by Ikawa et al.

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