Coating apparatus – Gas or vapor deposition – With treating means
Patent
1989-11-02
1991-03-12
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1648
Patent
active
049985035
ABSTRACT:
Disclosed herein is an apparatus for forming a deposited film by a microwave plasma CVD process comprising introducing a film-forming raw material gas into a reaction vessel capable of being vacuum sealed, and generating a microwave-excited plasma in the reaction vessel to deposit a film on a substrate for film deposition disposed in the reaction vessel. The apparatus comprises a waveguide for transmitting microwave energy, a pair of microwave cutoff cavities having different cutoff frequencies, the cavities being oppositely disposed on opposite sides of the waveguide, and a reaction vessel disposed to penetrate through the waveguide and the microwave cutoff cavities, wherein a raw material gas inlet is provided at one end of the reaction vessel, and a film deposition space is provided at the other end of the reaction vessel, whereby it is possible to use effectively the plasma generated in the reaction vessel for film deposition without leakage of the plasma into the cavity on the gas inlet side, and to perform stable film deposition with good reproducibility.
REFERENCES:
patent: 4401054 (1983-08-01), Matsuo
patent: 4532199 (1985-07-01), Ueno
Kanai Masahiro
Murakami Tsutomu
Bueker Richard
Canon Kabushiki Kaisha
LandOfFree
Apparatus for forming functional deposited film by microwave pla does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for forming functional deposited film by microwave pla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming functional deposited film by microwave pla will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-442796