Apparatus for forming films of a semiconductor device, a method

Details Apparatus for forming films of a semiconductor device, a method Apparatus for forming films of a semiconductor device, a method

1998-10-08

2000-11-21

Mills, Gregory

Coating apparatus

Gas or vapor deposition

Work support

118723E, 118723I, 118719, 156345, C23C 1600, H05H 100

Patent

active

061497304

ABSTRACT:
In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate.
The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.

REFERENCES:
patent: 5505779 (1996-04-01), Mizuno et al.
patent: 5902461 (1999-05-01), Xu et al.
patent: 5919332 (1999-07-01), Koshiishi et al.

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