Coating apparatus – Gas or vapor deposition – With treating means
Patent
1988-09-28
1990-12-18
Beck, Shrive
Coating apparatus
Gas or vapor deposition
With treating means
118725, 427 541, 4272552, C23C 1600
Patent
active
049778552
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus for forming a high quality film at a high speed.
BACKGROUND ART
In fabrication processes of semiconductor ICs, for example, processes of formation of films such as metal films of Al, Al--Si, Al--Cu--Si, W, and Mo, etc., semiconductor thin films of polysilicon, etc., and insulating films of SiO.sub.2 and Si.sub.3 N.sub.4, etc., are repeated. Thereupon, qualities of those films reflect upon the yields of the resulting products directly, and a rate of the film formation controls the throughput of those products. For the formation for such films, a process of CVD (Chemical Vapor Deposition) is frequently utilized. Thereupon, a technique of hot wall reduced pressure CVD, which employs an electric oven for heating a wafer (substrate), is primarily utilized. On the other hand, a CVD process is usually employed too, in which a wafer is heated by making use of radiofrequency heating or lamp heating (radiation heating) to heat only the wafer but without heating a reaction pipe wall and a reaction chamber inner wall as much as possible for thereby preventing gas temperature from being raised and restraining a reaction in gas phase to the utmost.
However, those CVD techniques are all adapted to force stock gas such as SiH.sub.4, SiH.sub.6, SiH.sub.2 Cl.sub.2, NH.sub.3, O.sub.2, and WF.sub.6, etc., to flow through the whole reaction chamber, and can not prevent a process from being produced, in which process a violent reaction is caused in gas phase even with the rise of gas temperature suppressed as much as possible and allows the stock gas to change to fine particles of smaller diameters in the gas phase and pour on a wafer. This is the primary reason why those CVD techniques can not assure high performance thin films. Moreover, since the stock gas is forced to flow through the whole reaction chamber, it has an extremely reduced ratio of a fraction thereof used for film formation on the wafer surface to the other fractions, and results in great quantities of products deposited on a reaction chamber inner wall and a downstream exhaust system inner wall while increasing in the extreme burdens to dispose exhaust gas. Those deposits on the reaction chamber inner wall produce dust which in turn interrupts fabrication of LSIs (Large-Scale Integrated Circuit), and hence maintenance to eliminate those deposits on the reaction chamber inner wall of the CVD device is urgent in the field. Those deposits thus reduce operating efficiency of the device and cause the interior of the reaction chamber to be exposed to the atmosphere with every maintenance, whereby the cleanness of the reaction atmosphere is deteriorated in the process of film formation owing to contamination caused by the atmospheric components deposited on the reaction chamber inner wall with the result of prevention of formation of high performance films and bad reproducibility of film thickness and film quality.
In fact, the present status of arts is no match for realization of an automated fabrication line with uniform quality of products and high yield thereof.
The present invention, for solves the problems of prior art CVD devices for film formation, as illustrated in FIG. 1 (T. Ohmi, "Soft and clean Technologies for submicron LSI fabrication", Proc. 1986 SEMI symposium, pp. 1.about.21 1986.about.12). In the FIG. 1, the numerals indicate the following: 11-ultra-high vacuum reaction chamber, which is formed by coating a SUS 304L having a circumferential surface rendered to mirror finishing with TiN; 12-wafer (substrate) such as silicon; 13-wafer susceptor for placing the wafer thereon; 14-wafer heating unit, which is composed of fourty five plasma torches disposed therein concentrically in a multi-stage fashion in the atmosphere of low gas pressure of N.sub.2 and Ar; 15- infrared lamp heating unit, which heats the wafer 12 from the side of its surface; 16- stock gas supply system for supplying stock gas such as SiH.sub.4, Si.sub.2 H.sub.6, H.sub.2 +SiH.sub.2 Cl.sub.2, WF.sub.6 +H.sub.2
REFERENCES:
patent: 3603284 (1971-09-01), Garnache
patent: 3805736 (1974-04-01), Foehring et al.
patent: 4313783 (1982-02-01), Davies et al.
patent: 4788309 (1988-11-01), Laine et al.
Garnache, R. R. and K. W. Zyber, "Gas Injection System", IBM Technical Disclosure Bulletin, vol. 14, No. 9, (Feb. 1972), p. 2551.
Ohmi Tadahiro
Umeda Masaru
Beck Shrive
OHMI Tadahiro
Owens Terry J.
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