Coating apparatus – With heat exchange – drying – or non-coating gas or vapor...
Patent
1995-05-26
1996-06-18
Warden, Jill
Coating apparatus
With heat exchange, drying, or non-coating gas or vapor...
118 64, 118300, 118324, H01L 21225
Patent
active
055273890
ABSTRACT:
Apparatus for forming shallow p-n junctions in silicon substrates to produce photovoltaic cells, which apparatus provides three processing chambers. An ultrasonic spray is mounted in the first processing chamber to coat a front surface of the substrate with a liquid dopant-containing material. The second processing chamber dries the coated substrates leaving a dopant-containing residue on the front surface. The third processing chamber fires the substrates in an oxygen-containing environment to diffuse the dopant into the substrate and provide a p-n junction. The apparatus conducts humidified air to each chamber to control polymerization of the dopant source and to prevent non-humidified air from entering the chambers.
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Hanoka Jack I.
Rosenblum Mark D.
ASE Americas, Inc.
Le Long V.
Warden Jill
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