Apparatus for forming deposited films with microwave plasma CVD

Details Apparatus for forming deposited films with microwave plasma CVD Apparatus for forming deposited films with microwave plasma CVD

1992-04-30

1993-08-03

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118723, 118725, 118728, 118730, C23C 1650

Patent

active

052325075

ABSTRACT:
An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.

REFERENCES:
patent: 4785763 (1988-11-01), Saitoh
patent: 4840139 (1989-06-01), Takei
patent: 4995341 (1991-02-01), Matsuyama

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