Apparatus for forming a thin film on a substrate

Coating apparatus – Gas or vapor deposition – With treating means

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42218605, 42218629, 427 39, C23C 1650

Patent

active

050315714

ABSTRACT:
A film-forming apparatus comprising a high-frequency application electrode and an earth electrode. The high-frequency applying electrode has an uneven surface with projections and recesses. An amorphous silicon film is formed uniformly on a substrate at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode and the earth electrode, and positioning the substrate in an atmosphere of the generated glow discharge.

REFERENCES:
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4590042 (1986-05-01), Drage
patent: 4612077 (1986-09-01), Tracy et al.
patent: 4659401 (1987-04-01), Reif et al.
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4780169 (1988-10-01), Stark et al.

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