Apparatus for forming a thin film

Details Apparatus for forming a thin film Apparatus for forming a thin film

1987-08-04

1989-09-19

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118 501, 118719, 118723, C23C 1424, C23C 1434

Patent

active

048678597

ABSTRACT:
An apparatus for forming a thin film on a substrate has a first reaction chamber in which a thin film is formed by gaseous discharge and a second reaction chamber in which reactive atoms are generated. The first and second reaction chambers commuicate with one another through an orifice in the first reaction chamber. The first reaction chamber houses a device for generating a film on a substrate, and the second reaction chamber houses a device for generating reactive atoms. The orifice is disposed in the vicinity of both a film-forming region in the first reaction chamber and a reactive atom-generating region in the second reaction chamber so that reactive atoms from the second reaction chamber will pass through the orifice and enter the film-forming region in the first reaction chamber, combine with particles in the film-forming region to form a chemical compound, and accumulate on the substrate. In preferred embodiments, the reaction chambers are formed by a single housing having a partition which has an orifice therein and which divides the housing into two reaction chambers.

REFERENCES:
patent: 4572842 (1986-02-01), Dietrich et al.
J. L. Vossen, Thin Film Processes, Academic Press, New York, 1978, pp. 189-193, 195-198.
"Electrical Characteristics of TiN Contacts to N Silicon", Wittmer et al, Journal of Applied Physics, vol. 52(9), Sep. 1981.
"TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si", Ting, J. Vac. Sci. Technol., 21(1), May/Jun. 1982.

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