Apparatus for forming a thin film

Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium

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118666, 118704, 118715, 118724, 118725, 118728, C23C 1600

Patent

active

057025312

ABSTRACT:
A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

REFERENCES:
patent: 4560420 (1985-12-01), Lord
patent: 5160545 (1992-11-01), Maloney

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