Apparatus for forming a silicon oxide film on a silicon wafer

Details Apparatus for forming a silicon oxide film on a silicon wafer Apparatus for forming a silicon oxide film on a silicon wafer

1994-10-25

1996-02-06

Powell, William

Coating apparatus

Immersion or work-confined pool type

118404, 118407, 118429, B05C 300

Patent

active

054893364

ABSTRACT:
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

REFERENCES:
patent: 2725032 (1955-11-01), Mann
patent: 4563976 (1986-01-01), Foell et al.
patent: 4931109 (1990-06-01), Sabatka

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