Apparatus for forming a semiconductor crystal

Chemical apparatus and process disinfecting – deodorizing – preser – Physical type apparatus – Crystallizer

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156611, 156612, 156DIG103, 118723, C30B 3500, C30B 2508

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052426661

ABSTRACT:
In a semiconductor crystal growth apparatus, a cleaning chamber for cleaning the surface of a substrate is added to the structure consisting of a growth chamber and a preparation chamber. After the substrate is cleaned in the cleaning chamber, an epitaxial layer is grown on the substrate in the growth chamber. The grown epitaxial layer has an excellent crystallinity.

REFERENCES:
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patent: 4477311 (1984-10-01), Mimura et al.
patent: 4493142 (1985-01-01), Hwang
patent: 4569829 (1986-02-01), Shih
patent: 4605469 (1986-08-01), Shih et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4824518 (1989-04-01), Hayakawa et al.
patent: 4834831 (1989-05-01), Nishizawa et al.
Patent Abstracts of Japan, vol. 11, No. 122 (E-500) [2569], Apr. 16, 1987, Hitachi Ltd.

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