Coating apparatus – Gas or vapor deposition – With treating means
Patent
1989-03-13
1990-09-25
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1650
Patent
active
049585916
ABSTRACT:
Improvements in the apparatus for forming a functional deposited film by means of plasma chemical vapor deposition comprising a deposition chamber having a film forming space which is sealed and formed by a surrounding wall functioning as a cathode, an upper wall and a bottom wall, which contains a means for holding a cylindrical substrate functioning as an anode in the film forming space and which is provided with a film forming raw material gas supplying means, a means for impressing a discharging power between said cathode and said anode and a vacumming means, that the length L of said cathode and the interval d between the inside face of said cathode and the surface of said anode is so designed as to satisfy the equation: 5.ltoreq.L/d.ltoreq.40.
According to this improved apparatus, a desired light receiving memer, even if it is of a large square, which is excellent in both homogeneity in the layer quality and uniformity in layer thickness can be stably and effectively prepared at a high deposition speed.
REFERENCES:
patent: 4466380 (1984-08-01), Jansen
patent: 4501766 (1985-02-01), Suzuki
patent: 4529474 (1985-07-01), Fujiyama
patent: 4615299 (1986-10-01), Matsuyama
Vossen et al. Thin Film Processes, Academic Press, N.Y. 1978, pp. 335-339.
Bueker Richard
Canon Kabushiki Kaisha
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