Apparatus for forming a deposited film by plasma chemical vapor

Details Apparatus for forming a deposited film by plasma chemical vapor Apparatus for forming a deposited film by plasma chemical vapor

1998-07-16

2000-10-24

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

118723, C23C 1600

Patent

active

061350532

ABSTRACT:
A film-forming method and apparatus by high frequency plasma CVD, characterized by using a specific high frequency power introduction means comprising at least an electrode for introducing a high frequency power into a deposition chamber containing a substrate therein and an insulating member which covers said electrode such that the surface of said electrode is isolated from glow discharge caused in said deposition chamber, said electrode being provided with a plurality of gas ejection holes for ejecting gas against an inner face of said insulating member, wherein the formation of a deposited film on the substrate in the deposition chamber is conducted while ejecting gas (inert gas or hydrogen gas) from the gas ejection holes of the electrode against the inner face of the insulating member.

REFERENCES:
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4788120 (1988-11-01), Shirai et al.
patent: 4909183 (1990-03-01), Kamiya et al.
patent: 5637180 (1997-06-01), Gosain et al.

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