Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Reexamination Certificate
2007-11-08
2008-11-11
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for treating single-crystal
C117S200000, C117S900000, C118S715000
Reexamination Certificate
active
07449066
ABSTRACT:
An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.
REFERENCES:
patent: 6569765 (2003-05-01), Solomon et al.
patent: 6632725 (2003-10-01), Trassoudaine et al.
Buchanan & Ingersoll & Rooney PC
Hiteshew Felisa C
Samsung Corning Co., Ltd.
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