Apparatus for fabricating thin-film semiconductor device

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S715000, C118S719000

Reexamination Certificate

active

06863733

ABSTRACT:
There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.

REFERENCES:
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5178682 (1993-01-01), Tsukamoto et al.
patent: 5240556 (1993-08-01), Ishikawa et al.
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 5648276 (1997-07-01), Hara et al.
patent: 5753542 (1998-05-01), Yamazaki et al.
patent: 6017779 (2000-01-01), Miyasaka
patent: 6133148 (2000-10-01), Won et al.
patent: 6271066 (2001-08-01), Yamazaki et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6360687 (2002-03-01), Yanagisawa et al.
patent: 6444506 (2002-09-01), Kusumoto et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 3-292719 (1991-12-01), None
patent: 5-21393 (1993-01-01), None
patent: 5-182919 (1993-07-01), None
patent: 5-182923 (1993-07-01), None
patent: 5-326397 (1993-12-01), None
patent: 7-99321 (1995-04-01), None
patent: 7-118443 (1995-12-01), None
patent: 9-7911 (1997-01-01), None
patent: 9-8316 (1997-01-01), None
patent: 9-17729 (1997-01-01), None
patent: 9-36376 (1997-02-01), None
patent: 9-139356 (1997-05-01), None
patent: 9-320961 (1997-12-01), None
patent: 10-116989 (1998-05-01), None
patent: 10-149984 (1998-06-01), None
patent: 11-8195 (1999-01-01), None
patent: 11-17185 (1999-01-01), None
Japanese Office Action dated Dec. 4, 2001 with partial English translation.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for fabricating thin-film semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for fabricating thin-film semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for fabricating thin-film semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3372451

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.