Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2005-03-08
2005-03-08
Niebling, John F. (Department: 2812)
Coating apparatus
Gas or vapor deposition
With treating means
C118S715000, C118S719000
Reexamination Certificate
active
06863733
ABSTRACT:
There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.
REFERENCES:
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5178682 (1993-01-01), Tsukamoto et al.
patent: 5240556 (1993-08-01), Ishikawa et al.
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 5648276 (1997-07-01), Hara et al.
patent: 5753542 (1998-05-01), Yamazaki et al.
patent: 6017779 (2000-01-01), Miyasaka
patent: 6133148 (2000-10-01), Won et al.
patent: 6271066 (2001-08-01), Yamazaki et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6360687 (2002-03-01), Yanagisawa et al.
patent: 6444506 (2002-09-01), Kusumoto et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 3-292719 (1991-12-01), None
patent: 5-21393 (1993-01-01), None
patent: 5-182919 (1993-07-01), None
patent: 5-182923 (1993-07-01), None
patent: 5-326397 (1993-12-01), None
patent: 7-99321 (1995-04-01), None
patent: 7-118443 (1995-12-01), None
patent: 9-7911 (1997-01-01), None
patent: 9-8316 (1997-01-01), None
patent: 9-17729 (1997-01-01), None
patent: 9-36376 (1997-02-01), None
patent: 9-139356 (1997-05-01), None
patent: 9-320961 (1997-12-01), None
patent: 10-116989 (1998-05-01), None
patent: 10-149984 (1998-06-01), None
patent: 11-8195 (1999-01-01), None
patent: 11-17185 (1999-01-01), None
Japanese Office Action dated Dec. 4, 2001 with partial English translation.
Isaac Stanetta
McGinn & Gibb PLLC
NEC Corporation
Niebling John F.
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