Apparatus for fabricating piezoelectric films

Details Apparatus for fabricating piezoelectric films Apparatus for fabricating piezoelectric films

1990-12-21

1992-03-03

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429823, 20419212, C23C 1434

Patent

active

050929780

ABSTRACT:
When a piezoelectric film is formed on an semiconductor MOS substrate by the sputtering method, an apparatus for fabricating piezoelectric films according to the present invention can reduce damage in the MOS as far as possible.

REFERENCES:
patent: 3704219 (1972-11-01), McDowell
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4897171 (1990-01-01), Ohmi
M. Ambersley et al., "Piezoelectric . . . Sputtering", Thin Solid Films, 80 (1981), pp. 183-195.
Khuri-Takub et al., "Studies . . . ZnO Films", J. of Appl. Phys. vol. 46, No. 8, 8/75, pp. 3266-3272.
Pearce et al., "Aluminum . . . Devices", Appl. Phys. Lett., 39(11), 1/12/81, pp. 878-879.
J. S. Logan, Control of RF Sputtered Film Properties Through Substrate Tuning, Mar. 17, 1969, pp. 172-175.

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