Apparatus for fabricating a III-V nitride film

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

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C118S724000, C118S719000

Reexamination Certificate

active

07955437

ABSTRACT:
An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.

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English Abstract of JP 10-167884A published Jun. 23, 1998.
Machine generated English translation of JP 2000-12463 published Jan. 14, 2000.

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