Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2011-06-07
2011-06-07
MacArthur, Sylvia R. (Department: 1716)
Coating apparatus
Gas or vapor deposition
With treating means
C118S724000, C118S719000
Reexamination Certificate
active
07955437
ABSTRACT:
An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.
REFERENCES:
patent: 4047496 (1977-09-01), McNeilly et al.
patent: 5234862 (1993-08-01), Aketagawa et al.
patent: 5997649 (1999-12-01), Hillman
patent: 6039811 (2000-03-01), Park et al.
patent: 6206012 (2001-03-01), Suzuki et al.
patent: 6218280 (2001-04-01), Kryliouk et al.
patent: 6440221 (2002-08-01), Shamouilian et al.
patent: 6514073 (2003-02-01), Toshima et al.
patent: 6658763 (2003-12-01), Morad et al.
patent: 6709703 (2004-03-01), Shibata et al.
patent: 6774060 (2004-08-01), Mezey, Sr.
patent: 6814811 (2004-11-01), Ose
patent: 6891131 (2005-05-01), Sakuma et al.
patent: 2001/0025604 (2001-10-01), Sakai
patent: 2001/0047750 (2001-12-01), Ishida
patent: 0421780 (1992-01-01), None
patent: 10-167884 (1998-06-01), None
patent: 2000-012463 (2000-01-01), None
patent: 10-0200705 (1999-06-01), None
patent: 10-0200728 (1999-06-01), None
English Abstract of JP 10-167884A published Jun. 23, 1998.
Machine generated English translation of JP 2000-12463 published Jan. 14, 2000.
Nakamura Yukinori
Shibata Tomohiko
Tanaka Mitsuhiro
Burr & Brown
MacArthur Sylvia R.
NGK Insulators Ltd.
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