Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-09-20
2005-09-20
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
C438S017000, C438S015000, C438S018000
Reexamination Certificate
active
06946305
ABSTRACT:
A wafer for charge amount evaluation having a silicon substrate and p-type regions sandwiched between a first silicon oxide film and a SA-NSG film and surrounded by an undoped silicon film is prepared and subjected to a target process for which an amount of charge is to be evaluated. Then, etching is performed by using a BHF solution. By measuring an amount of etching in the p-type region, an amount of positive charge caused by the process in the wafer can be evaluated quantitatively in an easy and convenient manner.
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Matsumoto Michikazu
Sengoku Naohisa
Matsushita Electric - Industrial Co., Ltd.
Schillinger Laura M.
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