Etching a substrate: processes – Nongaseous phase etching of substrate
Reexamination Certificate
2007-08-15
2011-11-29
Alanko, Anita (Department: 1713)
Etching a substrate: processes
Nongaseous phase etching of substrate
C216S092000
Reexamination Certificate
active
08066896
ABSTRACT:
An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
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European Search Report from corresponding European Application No. EP06021737, dated Dec. 11, 2008.
Hashii Tomohiro
Katoh Takeo
Koyata Sakae
Murayama Katsuhiko
Takaishi Kazushige
Alanko Anita
Kolisch & Hartwell, P.C.
Sumco Corporation
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