Apparatus for etching wafer

Details Apparatus for etching wafer Apparatus for etching wafer

1996-08-30

1999-06-22

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

156345, 216 90, 438748, 438753, 438756, H01L 21306

Patent

active

059142812

ABSTRACT:
According to the invention, a plurality of wafers are disposed in a steady-state rotating flow of a mixed acid in a main chemical processing zone in an etching trough, the rotating flow being formed to be substantially concentric circle with the wafers, thus permitting uniform dispersion of air bubbles for bubbling in the mixed acid and stable flow thereof to obtain reliable reproduction of satisfactory flatness and luster. A flow of mixed acid in the etching trough is formed as a superficial horizontal laminar flow in the neighborhood of the liquid level and a rotating flow induced in the neighborhood of the semiconductor wafer. Mixed acid in the etching trough is caused to overflow from the mixed acid supply side to the opposite side and is thus discharged.

REFERENCES:
patent: 3640792 (1972-02-01), Alleman et al.
patent: 3677848 (1972-07-01), Stoller et al.
patent: 3799179 (1974-03-01), Thomas
patent: 3964957 (1976-06-01), Walsh
patent: 4251317 (1981-02-01), Foote
patent: 4817652 (1989-04-01), Liu et al.
patent: 4840701 (1989-06-01), Stern
patent: 5000795 (1991-03-01), Chung et al.
patent: 5430437 (1995-07-01), Ichikawa et al.

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