Apparatus for etching substrates with a luminous discharge

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156643, 20429831, 20429834, H01L 21306, C23C 1434

Patent

active

049542010

ABSTRACT:
In an apparatus for etching substrates (18) with a luminous discharge in a vacuum, containing a vacuum chamber (13), a substrate holder (17), an electrode (20, 21, 22) and a radiofrequency generator (24) whose output is connected on the one hand to the substrate holder and on the other hand to the electrode (20, 21, 22, 28), the electrode (20) opposite the substrate (17) and at least partially surrounded by a pot-like, grounded shield (23) is provided in the marginal zone with a projection rim (22) which is at the same potential and which spans the space between the electrode and the substrate (18) or substrate holder (17) except for a gap, while on the circumferential bottom margin of the approximately cylindrical projection rim (22) of the diode (20) a diaphragm ring (28) is provided which extends radially inwardly in a plane parallel to the substrate (18). To achieve a displacement of the marginal etch pit that occurs in anode sputtering, the pot-like shield (23) has a ring (26) of electrically insulating material which extends inwardly radially from its marginal portion (29) overlapping the projection rim (22) of the electrode (20), in a plane parallel to the substrate (18), to a point close to the outer margin (30) of the substrate (18).

REFERENCES:
patent: 4310759 (1982-01-01), Oechsner
patent: 4624767 (1986-01-01), Obinata
patent: 4767641 (1988-09-01), Kieser et al.
"Application of Plasma Processes to VLSI Technology", T. Sugano, John Wiley & Sons, NY/Chichester/Brisbane/Toronto/Singapore.

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