Apparatus for etching semiconductor material

Details Apparatus for etching semiconductor material Apparatus for etching semiconductor material

1986-10-22

1988-07-26

Coe, Philip R.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156627, C23F 102

Patent

active

047598174

ABSTRACT:
This invention relates an apparatus for etching a film such as an oxide film applied on one surface of a semiconductor material, and the apparatus includes a cup-shaped basin, a chuck for supporting a semiconductor material to be treated at lower surface thereof and a pair of electrical terminals contacting with an etchant which has just contacted with a film. The chuck is rotatably mounted spaced above the basin. The electric terminals detect changes of ionic density in the etchant in order to discriminate an end point of etching. A point of re-increase in ionic density in etchant is used as an etching end point.

REFERENCES:
patent: 3953265 (1976-04-01), Hood
patent: 4338157 (1982-07-01), Kanda
patent: 4339297 (1982-07-01), Aigo
patent: 4358338 (1982-11-01), Donney et al.

Affiliated with

Also associated with

Rating

Apparatus for etching semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for etching semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for etching semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-256588