Apparatus for etching of oxide film on semiconductor wafer

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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156639, 156640, 269 21, B44C 122, C03C 1500, C03C 2506

Patent

active

043392970

ABSTRACT:
An apparatus for applying photo-etching on one surface of a semiconductor wafer formed with oxide film is provided, which comprises a cup-shaped basin having at the bottom thereof a vertical passage for introducing etching liquid, and a chuck rotatably supported above said basin for vacuum-absorbing a semiconductor wafer at the bottom surface thereof, said one surface of wafer facing downward being contacted with etching liquid that is blown up vertically through said vertical passage of the basin, to thereby prevent the upward facing rear surface of wafer from being contacted with etching liquid to hold oxide film thereon, and means for rotating said chuck to remove any reaction gas resulted on said one surface of wafer.

REFERENCES:
patent: 3489608 (1970-01-01), Jacobs et al.
patent: 3536594 (1970-10-01), Pritchard
patent: 3747282 (1973-07-01), Katzke
patent: 4021278 (1977-05-01), Hood et al.
patent: 4280689 (1981-07-01), Frosch

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