Apparatus for epitaxially growing a chemical compound crystal

Details Apparatus for epitaxially growing a chemical compound crystal Apparatus for epitaxially growing a chemical compound crystal

1995-03-10

1996-06-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

118708, 118712, 427 10, C23C 1600

Patent

active

055251560

ABSTRACT:
An apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gases are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gases are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

REFERENCES:
patent: 4260649 (1981-04-01), Dension
patent: 4640720 (1987-02-01), Foxon
patent: 4676646 (1987-06-01), Strand
patent: 4736705 (1988-04-01), Weyburne
patent: 4931132 (1990-06-01), Aspnes
patent: 5009485 (1991-04-01), Hall
patent: 5091320 (1992-02-01), Aspnes

Affiliated with

Also associated with

Rating

Apparatus for epitaxially growing a chemical compound crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for epitaxially growing a chemical compound crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for epitaxially growing a chemical compound crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-349742