Apparatus for epitaxial crystal growth from the liquid phase

Details Apparatus for epitaxial crystal growth from the liquid phase Apparatus for epitaxial crystal growth from the liquid phase

1977-01-25

1982-01-05

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118415, B05C 318

Patent

active

043088201

ABSTRACT:
In an arrangement for providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of the reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought to a desired height relative to the lower side of the reservoir, and solution from the reservoir is provided on the substrate. When the reservoir is removed relative to the substrate, a quantity of solution at an adjustable height is left on the substrate.

REFERENCES:
patent: 2516908 (1950-08-01), Pottle
patent: 2608177 (1952-08-01), Powers
patent: 2910041 (1959-10-01), Greenlie
patent: 3747562 (1973-07-01), Stone et al.
patent: 3785884 (1974-01-01), Lockwood
patent: 3809584 (1974-05-01), Akai et al.
patent: 3821039 (1974-06-01), Ettenberg
patent: 3879235 (1975-04-01), Gatos et al.

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