Apparatus for dry etching

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118730, H01L 2100

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active

050768778

ABSTRACT:
An apparatus for dry etching, which comprises a stage for supporting a substrate, a rotor having a center shaft, the stage and an arm connecting the stage to the center shaft, and a driving means for turning the rotor at the center shaft as a turning center in the direction tangential to the circumference of a circle established by turning of the surface of the substrate at the center shaft as a turning center, the rotor being housed in a chamber, can make uniform perpendicular submicron etching with radicals or a reactive gas without using ions and without damages on the substrate.

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patent: 4528438 (1985-07-01), Poulsen et al.
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4624214 (1986-11-01), Suzuki et al.
patent: 4788994 (1988-12-01), Shinbara
patent: 4950376 (1990-08-01), Hayashi et al.
patent: 4961812 (1990-10-01), Baerg et al.
Anisotropic Etching of Polycrystalline Silicon with a Hot Cl.sub.2 Molecular Beam, Suzuki et al., J. Appl. Phys. 64(7) 3697-3705.
Hot-Het Etching of Pb, GaAs, and Si, Geis et al., J. Vac. Sci. Technol. B4 (1) Jan./Feb. (1987) 363-365.
Hot Jet Etching of GAAs and Si, Ceis et al., J. Vac. Sci. Technol. B4 (1) Jan./Feb. 1986 315-317.
Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds, Ibbotson et al., J. Appl. Phys. 56 (1) 2939-2942.

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