Apparatus for doping semiconductors in centrifuge

Details Apparatus for doping semiconductors in centrifuge Apparatus for doping semiconductors in centrifuge

1976-01-26

1977-06-07

Feldbaum, Ronald

Coating apparatus

With cutting, punching or tearing of work

Web or sheet work

118 48, C23C 1308

Patent

active

040276228

ABSTRACT:
A semiconductor material is doped or alloyed under vacuum with an impurity by thermal decomposition and by sedimentation resulting from centrifugal force. The doping material is alternatively applied by evaporation before being subjected to centrifugal force and may be heated up to the melting point before completion of the centrifugal action. A centrifuge is provided having a thermal insulating layer between the outer wall of a rotor and a support for basic semiconductor material to be doped. The doping impurity material to be evaporated onto the basic solid state material is placed in the center of the centrifuge rotor.

REFERENCES:
patent: 2996418 (1961-08-01), Bleil
patent: 3389070 (1968-06-01), Berghaus et al.
patent: 3502499 (1970-03-01), Coad
patent: 3598957 (1971-08-01), Yasuda et al.
patent: 3607368 (1971-09-01), Amstel
patent: 3699298 (1972-10-01), Briody

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