Apparatus for directional solidification of a crystal material

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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Details

422254, 1566161, 1566207, 156DIG62, C30B 1316

Patent

active

049256360

ABSTRACT:
A furnace for growing a semiconductor crystal includes an elongated tubular chamber encased within a cylindrical jacket. The furnace is divided into a plurality of zones with each zone having a corresponding insulation block for preventing heat loss from the chamber and to absorb external vibrations. The chamber is heated by sets of heater elements fixed thereto. Each set of heater elements is controlled by a corresponding processing means which supplies needed power thereto for generating the desired temperature in that zone. To draw heat from a particular area, an annular shunt disc may be interposed concentrically between the chamber and the jacket for providing a radial path for heat to flow from the chamber to the environment through the jacket. Because of its sound construction and the requirement of only minimal power, this furnace is particularly well adapted to operate on Earth, and in a micro-gravity environment and withstand launches to and from space.

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