Apparatus for diamond deposition by microwave plasma-assisted CV

Details Apparatus for diamond deposition by microwave plasma-assisted CV Apparatus for diamond deposition by microwave plasma-assisted CV

1992-07-10

1994-11-01

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118725, 118730, C23C 1650

Patent

active

053604857

ABSTRACT:
Apparatus for depositing diamond on a substrate assisted by microwave plasma, comprising two zones, a plasma formation zone located in a waveguide and a diamond deposition zone located outside the waveguide. The apparatus includes means making it possible to form a stable plasma in the deposition zone, so as to considerably increase the substrate surface which can be treated.

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Paquin et al, "Amorphors Silicon for Photovoltaics Produced by New Microwave Plasma-Deposition Techniques", Can. J. Phys. vol. 63, 1985, pp. 831-837.
Joeris et al, "Deposition Experiments With Separated Atomic Hydrogen and CH.sub.4 Sources", Diamond and Diamond-Like Films and Coatings, pp. 549-554 (Jan. 1992).
Catherine, "Preparation Techniques for Diamond-Like Carbon", Diamond and Diamond-Like Films and Coatings, pp. 193-227 (Jan. 1992).
J. Phys. E: Sci. Instrum. 20 (1987), "The Waveguide Surfatron: a High Power . . . Columns", Moisan et al, pp. 1356-1361.
Applied Physics Letters, vol. 23, Dec. 5, 1988, "Spiral Hollow Cathode Plasma-Assisted Diamond Deposition", Tzeng et al, pp. 2326-2327.

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