Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-08-27
2000-10-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257429, 257436, 257444, 2504844, 250581, H01L 3100, H01L 31115, H01L 310232
Patent
active
061336149
ABSTRACT:
A method for manufacturing a semiconductor apparatus for detecting radiation provided with phosphor comprises the steps of forming a phosphor layer integrally with a meshed partition plate having partitions per pixel of the semiconductor apparatus for detecting radiation, and of separating the phosphor per pixel by removing the phosphor on the partitioning portion of the partition plate by the irradiation of laser beam in the form of grooves together with the surface layer of the partitioning portions in order to make the phosphor thick to obtain a higher sensitivity, and also to make pixel pitches finer to enhance resolution, thus obtaining exact images without creating any cross talks between pixels.
REFERENCES:
patent: 4914301 (1990-04-01), Akai
patent: 5041729 (1991-08-01), Takahashi et al.
patent: 5187369 (1993-02-01), Kingsley et al.
patent: 5430298 (1995-07-01), Possin et al.
European Search Report dated Sep. 22, 1998.
Kawasaki Keiichi
Shoji Tatsumi
Tanaka Ichiro
Tanikawa Isao
Tashiro Kazuaki
Canon Kabushiki Kaisha
Ngo Ngan V.
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